www.kersemi.com 1 power mosfet IRFR9020, irfu9020, sihfr9020, sihfu9020 features ? surface mountable (order as IRFR9020/sihfr9020) ? straight lead option (order as irfu9020/sihfu9020) ? repetitive avalanche ratings ? dynamic dv/dt rating ? simple drive requirements ? ease of paralleling ? lead (pb)-free available description the power mosfet technolog y is the key to vishay?s advanced line of power mosfet transistors. the efficient geometry and unique processing of this latest ?state of the art? design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt. the power mosfet transistors also feature all of the well established advantages of mosfet?s such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. surface mount packages enhance circuit performance by reducing stray inductances and capacitance. the to-252 surface mount package brings the advantages of power mosfet?s to high volume applications where pc board surface mounting is desirable . the surface mount option IRFR9020/sihfr9020 is provided on 16mm tape. the straight lead option irfr9 020/sihfr9020 of the device is called the ipak (to-251). they are well suited for app lications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipmen t, dc/dc converters, and a wide range of consumer products. note a. see device orientation. product summary v ds (v) - 50 r ds(on) ( )v gs = - 10 v 0.28 q g (max.) (nc) 14 q gs (nc) 6.5 q gd (nc) 6.5 configuration single s g d p-channel mosfet dpak (to-252) ipak (to-251) a v aila b le rohs* compliant ordering information package dpak (to-252) dpak (to-2 52) dpak (to-252) ipak (to-251) lead (pb)-free IRFR9020pbf IRFR9020trpbf a IRFR9020trlpbf a irfu9020pbf sihfr9020-e3 sihfr9020t-e3 a sihfr9020tl-e3 a sihfu9020-e3 snpb IRFR9020 IRFR9020tr a IRFR9020trl a irfu9020 sihfr9020 sihfr9020t a sihfr9020tl a sihfu9020 absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 50 v gate-source voltage v gs 20 continuous drain current v gs at - 10 v t c = 25 c i d - 9.9 a t c = 100 c - 6.3 pulsed drain current a i dm - 40 linear derating factor 0.33 w/c single pulse avalanche energy b e as 440 mj repetitive avalanche current a i ar - 9.9 a repetitive avalanche energy a e ar 4.2 mj * pb containing terminations are not rohs compliant, exemptions may apply
www.kersemi.com 2 IRFR9020, irfu9020, sihfr9020, sihfu9020 notes a. repetitive rating; pulse width limited by maximum junction temper ature (see fig. 14). b. v dd = - 25 v, starting t j = 25 c, l = 5.1 mh, r g = 25 , peak i l = - 9.9 a c. i sd - 9.9 a, di/dt -120 a/s, v dd 40 v, t j 150 c. d. 0.063" (1.6 mm) from case. e. when mounted on 1" square pcb (fr-4 or g-10 material). maximum power dissipation t c = 25 c p d 42 w peak diode recovery dv/dt c dv/dt 5.8 v/ns operating junction and st orage temperature range t j , t stg - 55 to + 150 c soldering recommendations (peak temperature) for 10 s 300 d thermal resistance ratings parameter symbol min. typ. max. unit maximum junction-to-ambient r thja - - 110 c/w case-to-sink r thcs -1.7- maximum junction-to-case (drain) r thjc --3.0 absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 50 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 2.0 - - 4.0 v gate-source leakage i gss v gs = 20 v - - 500 na zero gate voltage drain current i dss v ds = max. rating, v gs = 0 v - - 250 a v ds = 0.8 x max. rating, v gs = 0 v, t j = 125 c - - 1000 drain-source on-state resistance r ds(on) v gs = - 10 v i d = 5.7 a b - 0.20 0.28 forward transconductance g fs v ds - 50 v, i ds = - 5.7 a 2.3 3.5 - s dynamic input capacitance c iss v gs = 0 v, v ds = - 25 v, f = 1.0 mhz, see fig. 9 - 490 - pf output capacitance c oss - 320 - reverse transfer capacitance c rss -70- total gate charge q g v gs = - 10 v i d = - 9.7 a, v ds = 0.8 x max. rating, see fig. 16 (independent operating temperature) -9.414 nc gate-source charge q gs -4.36.5 gate-drain charge q gd -4.36.5 turn-on delay time t d(on) v dd = - 25 v, i d = - 9.7 a, r g = 18 , r d = 2.4 , see fig. 15 (independent operating temperature) -8.212 ns rise time t r -5766 turn-off delay time t d(off) -1218 fall time t f -2538 internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact. -4.5- nh internal source inductance l s -7.5- d s g
www.kersemi.com 3 IRFR9020, irfu9020, sihfr9020, sihfu9020 notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. pulse width 300 s; duty cycle 2 %. typical characteristics 25 c, unless otherwise noted fig. 1 - typical output characteristics fig. 2 - typical transfer characteristics fig. 3 - typical saturation characteristics fig. 4 - maximum safe operating area drain-source body diode characteristics continuous source-drain diode current i s mosfet symbol showing the integral reverse p - n junction diode --- 9.9 a pulsed diode forward current a i sm --- 40 body diode voltage v sd t j = 25 c, i s = - 9.9 a, v gs = 0 v b --- 6.3v body diode reverse recovery time t rr t j = 25 c, i f = - 9,7 a, di/dt = 100 a/s b 56 110 280 ns body diode reverse recovery charge q rr 0.17 0.34 0.85 nc forward turn-on time t on intrinsic turn-on time is neglig ible (turn-on is dominated by l s and l d ) specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit s d g
www.kersemi.com 4 IRFR9020, irfu9020, sihfr9020, sihfu9020 fig. 5 - typical transconductance vs. drain current fig. 6 - typical source-drain diode forward voltage fig. 7 - breakdown voltage vs. temperature fig. 8 - normalized on-resistance vs. temperature
www.kersemi.com 5 IRFR9020, irfu9020, sihfr9020, sihfu9020 fig. 9 - typical capacitance vs. drain-to-source voltage fig. 10 - typical gate charge vs. gate-to-source voltage fig. 11 - typical on-resistance vs. drain current fig. 12 - maximum drain current vs. case temperature
www.kersemi.com 6 IRFR9020, irfu9020, sihfr9020, sihfu9020 fig. 13a - maximum avalanche vs. starting junction temperature fig. 13b - unclamped inductive test circuit fig. 13c - unclamped inductive waveforms fig. 14 - maximum effective transient thermal impedance, junction-to-case vs. pulse duration i as v ds v dd v ds t p i l
www.kersemi.com 7 IRFR9020, irfu9020, sihfr9020, sihfu9020 fig. 15a - switching time waveforms fig. 15b - switching time test circuit fig. 16a - basic gate charge waveform fig. 16b - gate charge test circuit v gs 10 % 90 % v ds t d(on) t r t d(off) t f q gs q gd q g v g charge - 10 v
www.kersemi.com 8 IRFR9020, irfu9020, sihfr9020, sihfu9020 fig. 17 - for p-channel p. w . period di/dt diode reco v ery d v /dt ripple 5 % body diode for w ard drop re-applied v oltage re v erse reco v ery c u rrent body diode for w ard c u rrent v gs = - 10 v * v dd i sd dri v er gate dri v e d.u.t. i sd w a v eform d.u.t. v ds w a v eform ind u ctor c u rrent d = p. w . period + - - - - + + + * v gs = - 5 v for logic le v el and - 3 v dri v e de v ices peak diode recovery dv/dt test circuit v dd ? d v /dt controlled b y r g ? i sd controlled b y d u ty factor "d" ? d.u.t. - de v ice u nder test d.u.t. circ u it layo u t considerations ? lo w stray ind u ctance ? gro u nd plane ? lo w leakage ind u ctance c u rrent transformer r g compliment n -channel of d.u.t. for dri v er
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